fdp52n20 / FDPF52N20T n-channel unifet tm mosfet ?2007 fairchild semiconductor corporation fdp52n20 / FDPF52N20T rev. c0 www.fairchildsemi.com 1 fdp52n20 / FDPF52N20T n-channel unifet tm mosfet 200 v, 52 a, 49 m? features ? i ds(on) = 41 m? ( typ.) @ v gs = 10 v, i d = 26 a ? low gate charge (typ. 49 nc) ? low c rss ( typ. 66 pf) ? 100% avalanche tested ? rohs compliant description unifet tm mosfet is fairchild semiconductor ? s high voltage mosfet family based on planar stripe and dmos technology. this mosfet is tailored to reduce on-state resistance, and to provide better switching performance and higher av alanche energy strength. this device family is suitable for switching power converter applications such as power factor correction (pfc), flat panel display (fpd) tv power, atx and electronic lamp ballasts. d g s to-220f mosfet maximum ratings t c = 25 o c unless otherwise noted thermal characteristics symbol parameter fdp52n20 FDPF52N20T unit v dss drain to source voltage 200 v v gss gate to source voltage 30 v i d d r a i n c u r r e n t -continuous (t c = 25 o c) 52 52* a -continuous (t c = 100 o c) 33 33* i dm d r a i n c u r r e n t - p u l s e d (note 1) 208 208* a e as single pulsed avalanche energy (note 2) 2520 mj i ar avalanche current (note 1) 52 a e ar repetitive avalanche energy (note 1) 35.7 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25 o c) 357 38.5 w - derate above 25 o c 2.86 0.3 w/ o c t j , t stg operating and storage temperature range -55 to +150 o c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 o c symbol parameter fdp52n20 FDPF52N20T unit r jc thermal resistance, junction to case , max. 0.35 3.3 o c/w r cs thermal resistance, case to sink , typ. 0.5 - r ja thermal resistance, junction to ambient, max. 62.5 62.5 *drain current limited by maximum junction temperature applications ? pdp tv ? lighting ? uninterruptible power supply ? ac-dc power supply april 2013 g d s g d s to- 220
2 package marking and ordering information t c = 25 o c unless otherwise noted electrical characteristics off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e charac teristics device marking device package reel size tape width quantity fdp52n20 fdp52n20 to-220 - - 50 FDPF52N20T FDPF52N20T to-220f - - 50 symbol parameter test conditions min. typ. max. unit bv dss drain to source breakdown voltage i d = 250 a, v gs = 0v, t j = 25 o c 200 - - v ? bv dss / ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 o c-0.2-v/ o c i dss zero gate voltage drain current v ds = 200v, v gs = 0v - - 1 a v ds = 160v, t c = 125 o c--1 0 i gss gate to body leakage current v gs = 30v, v ds = 0v - - 100 na v gs(th) gate threshold voltage v gs = v ds , i d = 250 a3 . 0-5 . 0v r ds(on) static drain to source on resistance v gs = 10v, i d = 26a - 0.041 0.049 ? g fs forward transconductance v ds = 40v, i d = 26a (note 4) -35-s c iss input capacitance v ds = 25v, v gs = 0v f = 1mhz - 2230 2900 pf c oss output capacitance - 540 700 pf c rss reverse transfer capacitance - 66 100 pf q g(tot) total gate charge at 10v v ds = 160v, i d = 52a v gs = 10v (note 4, 5) -4963nc q gs gate to source gate charge - 19 - nc q gd gate to drain ?miller? charge - 24 - nc t d(on) turn-on delay time v dd = 100v, i d = 20a r g = 25? (note 4, 5) - 53 115 ns t r turn-on rise time - 175 359 ns t d(off) turn-off delay time - 48 107 ns t f turn-off fall time - 29 68 ns i s maximum continuous drain to source diode forward current - - 52 a i sm maximum pulsed drain to source diode forward current - - 204 a v sd drain to source diode forward voltage v gs = 0v, i sd = 52a - - 1.5 v t rr reverse recovery time v gs = 0v, i sd = 52a di f /dt = 100a/ s (note 4) - 162 - ns q rr reverse recovery charge - 1.3 - c notes: 1. repetitive rating: pulse width limited by maximum junction temperature 2. l = 1.4mh, i as = 52a, v dd = 50v, r g = 25 ? , starting t j = 25 c 3. i sd 52a, di/dt 200a/ s, v dd bv dss , starting t j = 25 c 4. pulse test: pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature typical characteristics fdp52n20 / FDPF52N20T n-channel unifet tm mosfet ?2007 fairchild semiconductor corporation fdp52n20 / FDPF52N20T rev. c0 www.fairchildsemi.com
3 typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 10 -1 10 0 10 1 10 -1 10 0 10 1 10 2 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v bottom : 5.5 v * notes : 1. 250 s pulse test 2. t c = 25 c i d , drain current [a] v ds , drain-source voltage [v] 24681 01 2 10 0 10 1 10 2 150 c 25 c -55 c * notes : 1 . v ds = 40v 2 . 250 s pulse test i d , drain current [a] v gs , gate-source voltage [v] 0 25 50 75 100 125 150 0.00 0.02 0.04 0.06 0.08 0.10 0.12 v gs = 20v v gs = 10v * note : t j = 25 c r ds(on) [ ? ], drain-source on-resistance i d , drain current [a] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 10 0 10 1 10 2 150 ? * notes : 1 . v gs = 0v 2 . 250 s pulse test 25 ? i dr , reverse drain current [a] v sd , source-drain voltage [v] 10 -1 10 0 10 1 0 1000 2000 3000 4000 5000 6000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd * note ; 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitances [pf] v ds , drain-source voltage [v] 0 102030405060 0 2 4 6 8 10 12 v ds = 100v v ds = 40v v ds = 160v * note : i d = 52a v gs , gate-source voltage [v] q g , total gate charge [nc] fdp52n20 / FDPF52N20T n-channel unifet tm mosfet ?2007 fairchild semiconductor corporation fdp52n20 / FDPF52N20T rev. & www.fairchildsemi.com
4 typical performance characteristics (continued) figure 7. breakdown voltage variation figur e 8. on-resistance variation vs. temperature vs. temperature figure 9-1. maximum safe op erating area figure 9-2. maximum safe operating area - fdp52n20 - FDPF52N20T figure 10. maximum drain current -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 * notes : 1. v gs = 0 v 2. i d = 250 a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ c] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 * notes : 1 . v gs = 10 v 2 . i d = 26 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ c] 10 0 10 1 10 2 10 -2 10 -1 10 0 10 1 10 2 10 3 100 ms 1 ms 10 s dc 10 ms 100 s operation in this area is limited by r ds(on) * notes : 1. t c = 25 c 2. t j = 150 c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 10 0 10 1 10 2 10 -2 10 -1 10 0 10 1 10 2 10 3 100 ms 1 ms 10 s dc 10 ms 100 s operation in this area is limited by r ds(on) * notes : 1 . t c = 25 c 2 . t j = 150 c 3 . single pulse i d , drain current [a] v ds , drain-source voltage [v] 25 50 75 100 125 150 0 10 20 30 40 50 60 i d , drain current [a] t c , case temperature [ c] fdp52n20 / FDPF52N20T n-channel unifet tm mosfet ?2007 fairchild semiconductor corporation fdp52n20 / FDPF52N20T rev. c0 www.fairchildsemi.com
5 typical performance characteristics (continued) figure 11-1. transient thermal response curve - fdp52n20 figure 11-2. transient thermal response curve - FDPF52N20T 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 * notes : 1 . z jc (t) = 3.3 0 c/w max. 2 . duty factor, d=t 1 /t 2 3. t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , square w ave pulse duration [sec] t 1 p dm t 2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 * notes : 1 . z jc (t) = 0.35 0 c/w max. 2. duty factor, d=t 1 /t 2 3. t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , square w ave pulse duration [sec] t 1 p dm t 2 fdp52n20 / FDPF52N20T n-channel unifet tm mosfet ?2007 fairchild semiconductor corporation fdp52n20 / FDPF52N20T rev. c0 www.fairchildsemi.com
6 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms fdp52n20 / FDPF52N20T n-channel unifet tm mosfet ?2007 fairchild semiconductor corporation fdp52n20 / FDPF52N20T rev. c0 www.fairchildsemi.com
7 peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g sam e type as d u t v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( d riv e r ) i sd ( dut ) v ds ( dut ) v dd body diode forw ard volta g e d rop v sd i fm , body d iode forw ard c urrent body d iode r everse c urrent i rm body d iode r ecovery dv/dt di/dt d = g ate p ulse w idth g ate pulse period -------------------------- dut v ds + _ driver r g sam e type as d u t v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( d riv e r ) i sd ( dut ) v ds ( dut ) v dd body diode forw ard volta g e d rop v sd i fm , body d iode forw ard c urrent body d iode r everse c urrent i rm body d iode r ecovery dv/dt di/dt d = g ate p ulse w idth g ate pulse period -------------------------- d = g ate p ulse w idth g ate pulse period -------------------------- fdp52n20 / FDPF52N20T n-channel unifet tm mosfet ?2007 fairchild semiconductor corporation fdp52n20 / FDPF52N20T rev. c0 www.fairchildsemi.com
dimensions in millimeter s mechanical dimensions to-220b03 fdp52n20 / FDPF52N20T n-channel unifet tm 8 c 0
mechanical dimensions dimensions in millimeters to-220m03 fdp52n20 / FDPF52N20T n-channel unifet tm 9 c 0
trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. fairchild does not assume any liability arising out of th e application or use of any product or circuit described herein; neither does it convey an y license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwide terms and conditio ns, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized fo r use as critical components in life support devices or systems without the express written approval of fa irchild semiconductor corporation. as used here in: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform w hen properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms 2cool? accupower? ax-cap ? * bitsic? build it now? coreplus? corepower? crossvolt ? ctl? current transfer logic? deuxpeed ? dual cool? ecospark ? efficentmax? esbc? fairchild ? fairchild semiconductor ? fact quiet series? fact ? fast ? fastvcore? fetbench? fps? f-pfs? frfet ? global power resource sm green bridge? green fps? green fps? e-series? g max ? gto? intellimax? isoplanar? marking small speakers sound louder and better? megabuck? microcoupler? microfet? micropak? micropak2? millerdrive? motionmax? mwsaver? optohit? optologic ? optoplanar ? powertrench ? powerxs? programmable active droop? qfet ? qs? quiet series? rapidconfigure? saving our world, 1mw/w/kw at a time? signalwise? smartmax? smart start? solutions for your success? spm ? stealth? superfet ? supersot?-3 supersot?-6 supersot?-8 supremos ? syncfet? sync-lock? ?* tinyboost? tinybuck? tinycalc? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? transic ? trifault detect? truecurrent ? * serdes? uhc ? ultra frfet? unifet? vcx? visualmax? voltageplus? xs? ? ? datasheet identification product status definition advance information formative / in design datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the ri ght to make changes at any time without notice to improve design. no identification needed full production datasheet contains final specifications. fair child semiconductor reserves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specifications on a product that is discontinued by fairchild semiconductor. the datasheet is for reference information only. anti-counterfeiting policy fairchild semiconductor corporation?s anti-counterfeiting policy. fairchild?s anti-counterfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in th e industry. all manufactures of semiconductor products are expe riencing counterfeiting of their parts. customers who inadvertently purchase counterfeit parts ex perience many problems such as loss of brand reputation, substa ndard performance, failed application, and increased cost of production and manufacturing dela ys. fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. fairchild strongly encourages customers to purchase fairchild parts either directly from fa irchild or from authorized fairchild distributors who are listed by country on our web page cited above . products customers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have full traceability, meet fairchild?s quality standards for handing and storage and provide access to fairchild?s full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchild will not provide any warranty coverage or other assistance for parts bought from unau thorized sources. fairchild is committed to combat this global problem and encourage our customer s to do their part in stopping th is practice by buying direct or from authorized distributors. rev. i64 tm ? fdp52n20 / FDPF52N20T n-channel unifet tm 10 c 0
|
